Mokhovaya 11-7, Moscow, 125009, Russia
The Institute of Radioengineering and Electronics RAS
Dmitriev A. S., Efremova E. V., Nikishov A. Y., Panas A. I.
Generation of microwave chaotic oscillations in CMOS structure
2010, Vol. 6, No. 1, pp. 159-167
Chaotic oscillator based on CMOS structure is proposed, fabricated and investigated. Monolithic IC сhip of the oscillator is fabricated in 0.18 um process technology. As is shown, the transition to chaos in this system occurs through destruction of 2D torus. In experiments with the IC, stable generation of chaotic oscillations is observed, with spectral density maximum in the range 2.8–3.8GHz.